Comparison of deep-submicrometer conventional and retrograde n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 8, 2000, Pages 1573-1579

  Ma, Scan T ^b   Brews, John R ^a,b  

^a IEEE   (United States)

^b University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SHORT CHANNEL EFFECT;

ELECTRIC CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

MOSFET DEVICES;

EID: 0034251093     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.853033     Document Type: Article

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