Separation of effects of statistical impurity number fluctuations and position distribution on Vth fluctuations in scaled MOSFETs

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1838-1842

  Yasuda, Yuri ^a   Takamiya, Makoto ^a,b   Hiramoto, Toshiro ^c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b CHUO UNIVERSITY   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPUTER SIMULATION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

CHARGE SHARING FACTOR; POSITION DISTRIBUTION; STATISTICAL IMPURITY NUMBER FLUCTUATIONS;

MOSFET DEVICES;

EID: 0034298158     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870557     Document Type: Article

References (18)

1. B. Hoeneisen and C. A. Mead, "Fundamental limitations in microelectronics-I: MOS technology," Solid-State Electron., vol. 15, p. 819, 1972.
2. T. Mizuno, J. Okamura, and A. Toriumi, "Experimental study of threshold voltage fluctuations using an 8k MOSFET's array," in Symp. VLSI Tech. Dig.. 1993, p. 41.
3. T. Mizuno, "Influence of statistical spatial-nonuniformity of dopant atoms on threshold voltage in a system of many MOSFETs," Jpn. J. Appl. Phys.. vol. 35, p. 842, 1996.
4. K. Takeuchi, T. Tatsumi, and A. Furukawa, "Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation," in 1EDM Tech. Dig.. 1997, p. 841.
5. K. Nishinohara, N. Shigyo, and T. Wada, "Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage," IEEE Trans. Electron Devices, vol. 39, p. 634, 1992.
6. H. S. Wong and Y. Taur, "Three-dimensional 'atomic' simulation of discrete random dopant distribution effects in sub-0.1 ftm MOSFET's," in 1EDM Tech. Dig.. 1993, p. 705.
7. T. Shimatani, S. Pidin, H. Kurino, and M. Koyanagi, "Device characteristic variation in 0.01 ftm MOSFET evaluated by three-dimensional Monte Carlo simulation," in Proc. Silicon Nanoelectronics Workshop. 1997, Workshop Abs., p. 16.
8. X. Tang, V. K. De, and J. D. Meindl, "Intrinsic MOSFET parameter fluctuations due to random dopant placement," IEEE Trans. VLSI Syst.. vol. 5, p. 369, 1997.
9. A. Stolk, F. P. Widdershoven, and D. B. M. Klaassen, "Modeling statistical dopant fluctuations in MOS transistors," IEEE Trans. Electron Devices, vol. 45, p. 1960, Sept. 1998.
10. A. Asenov, "Random dopant induced threshold voltage lowering and fluctuations in Sub-0.1 ftm MOSFET's: A 3-D 'Atomistic' simulation study," IEEE Trans. Electron Devices, vol. 45, p. 2505, 1998.
11. D. J. Frank, Y. Taur, M. leong, and H. S. P. Wong, "Monte Carlo modeling of threshold variation due to dopant fluctuation," in Symp. VLSI Tech. Dig., 1999, p. 169.
12. D. Vasileska, W. J. Gross, and D. K. Ferry, "Modeling of deep-submicrometer MOSFETs: random impurity effects, threshold voltage shifts and gate capacitance attenuation," in Proc. 1998 6th Int. Workshop on Computational Electronics, 1998, pp. 259-262.
13. R. W. Keys, "The effect of randomness in the distribution of impurity atoms on FET thresholds," Appl. Phys., vol. 8, p. 251, 1975.
14. C. Kühn, S. Marksteiner, T. E. Kopley, and W. Weber, "New method for verification of analytical device models using transistor parameter fluctuations," in IEDM Tech. Dig.. 1997, p. 145.
15. K. Takeuchi, "Channel size dependence of dopant-induced threshold voltage fluctuation," in Symp. VLSI Tech. Dig., 1998, p. 72.
16. Avantl Corp., "Medici Ver. 4.1," July, 1998.
17. Avantl Corp., "Davinci Ver. 4.1," July, 1998.
18. Y. Yasuda, M. Takamiya, and T. Hiramoto, "Effects of impurity position distribution on threshold voltage fluctuations in scaled MOSFETs," in Abst. Silicon Nanoelectronics Workshop, 1999, Workshop Abst., p. 86.