On the performance limits for Si MOSFET's: A theoretical study

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 232-240

  Assad, Farzin ^a   Ren, Zhibin ^a   Vasileska, Dragica ^b   Datta, Supriyo ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; NANOTECHNOLOGY; POISSON DISTRIBUTION; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

CHANNEL LENGTH; SCHRODINGER-POISSON SIMULATION;

MOSFET DEVICES;

EID: 0033882240     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817590     Document Type: Article

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