Dielectrics for GaN based MIS-diodes

Materials Research Society Symposium - Proceedings

Volumn 483, Issue , 1997, Pages 443-449

  Ren, F ^a   Abernathy, C R ^a   MacKenzie, J D ^a   Gila, B P ^a   Pearton, S J ^a   Hong, M ^a   Macos, M ^a   Schurman, M J ^a   Baca, A G ^a   Shul, R J ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; ROUGHNESS MEASUREMENT; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; THICKNESS MEASUREMENT; VOLTAGE MEASUREMENT;

X RAY REFLECTIVITY;

MISFET DEVICES;

EID: 0031369603     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-483-443     Document Type: Conference Paper

References (16)