High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

IEEE Electron Device Letters

Volumn 19, Issue 2, 1998, Pages 44-46

  Chen, Q ^a   Yang, J W ^a   Gaska, R ^a   Asif Khan, M ^a,b   Shur, Michael S ^c   Sullivan, G J ^d   Sailor, A L ^d   Higgings, J A ^d   Ping, A T ^e   Adesida, I ^e  

^a APA Optronics   (United States)

^b University of South Carolina   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d ROCKWELL SCIENCE CENTER   (United States)

^e University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MICROWAVE DEVICES; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0032002237     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.658598     Document Type: Article

References (13)

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