SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 8 A, 1999, Pages

Characterization of a GaN bipolar junction transistor after operation at 300 for over 300 h

(2) Yoshida, Seikoh a Suzuki, Joe a

a FURUKAWA ELECTRIC CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELIABILITY; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BEAM EQUIVALENT PRESSURE; BIPOLAR JUNCTION TRANSISTOR; GAS SOURCE MOLECULAR BEAM EPITAXY; KNUDSEN EFFUSION CELLS; QUADRUPOLE MASS SPECTROMETER;

BIPOLAR TRANSISTORS;

EID: 0033171966 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.l851 Document Type: Article

Times cited : (66)

References (13)

1
- 0028485013
- T. P. Chow and R. Tyagi: IEEE Trans. Electron Devices 41 (1994) 1481.
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1481
- Chow, T.P.¹ Tyagi, R.²

2
- 21544461610
- H. Morkoç, S. Strites, G. B. Gao, M. E. Lin, B. Sverdlov and M. Burns: J. Appl. Phys. 76 (1994) 1363.
- (1994) J. Appl. Phys. , vol.76 , pp. 1363
- Morkoç, H.¹ Strites, S.² Gao, G.B.³ Lin, M.E.⁴ Sverdlov, B.⁵ Burns, M.⁶

3
- 21544457041
- S. C. Binari, B. L. Rowland, W. Krupa, G. Kelner, K. Doverspike and D. K. Gasaki: Electron. Lett. 30 (1994) 1248.
- (1994) Electron. Lett. , vol.30 , pp. 1248
- Binari, S.C.¹ Rowland, B.L.² Krupa, W.³ Kelner, G.⁴ Doverspike, K.⁵ Gasaki, D.K.⁶

4
- 36449006910
- M. A. Khan, M. S. Shur, J. N. Kuzunia, Q. Chin, J. Burm and W. Schaff: Appl. Phys. Lett. 66 (1995) 1083.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1083
- Khan, M.A.¹ Shur, M.S.² Kuzunia, J.N.³ Chin, Q.⁴ Burm, J.⁵ Schaff, W.⁶

5
- 0029634689
- A. Özgür, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov and H. Morkoç: Electron. Lett. 31 (1995) 1389.
- (1995) Electron. Lett. , vol.31 , pp. 1389
- Özgür, A.¹ Kim, W.² Fan, Z.³ Botchkarev, A.⁴ Salvador, A.⁵ Mohammad, S.N.⁶ Sverdlov, B.⁷ Morkoç, H.⁸

6
- 3242764889
- O. Akutas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev and H. Morkoç: Appl. Phys. Lett. 69 (1996) 3872.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3872
- Akutas, O.¹ Fan, Z.F.² Mohammad, S.N.³ Botchkarev, A.E.⁴ Morkoç, H.⁵

7
- 0005062516
- J. Pankov, S. S. Chang, H. C. Lee, R. J. Molnar, T. D. Moustakas and B. Van Zeghbroeck: IEDM Tech. Dig. (1994) 389.
- (1994) IEDM Tech. Dig. , pp. 389
- Pankov, J.¹ Chang, S.S.² Lee, H.C.³ Molnar, R.J.⁴ Moustakas, T.D.⁵ Van Zeghbroeck, B.⁶

8
- 0032620512
- S. Yoshida and J. Suzuki: J. Appl. Phys. 85 (1999) 7931.
- (1999) J. Appl. Phys. , vol.85 , pp. 7931
- Yoshida, S.¹ Suzuki, J.²

9
- 0006240385
- S. Yoshida: J. Appl. Phys. 81 (1997) 7966.
- (1997) J. Appl. Phys. , vol.81 , pp. 7966
- Yoshida, S.¹

10
- 0031269774
- S. Yoshida: J. Cryst. Growth 181 (1997) 293.
- (1997) J. Cryst. Growth , vol.181 , pp. 293
- Yoshida, S.¹

11
- 0032074038
- S. Yoshida and J. Suzuki: Jpn. J. Appl. Phys. 37 (1998) L482.
- (1998) Jpn. J. Appl. Phys. , vol.37
- Yoshida, S.¹ Suzuki, J.²

12
- 0001285050
- S. Yoshida and J. Suzuki: J. Appl. Phys. 84 (1998) 2940.
- (1998) J. Appl. Phys. , vol.84 , pp. 2940
- Yoshida, S.¹ Suzuki, J.²

13
- 0032094133
- Y. Zohta, H. Kuroda, R. Nii and S. Nakamura: J. Cryst. Growth 189/190 (1998) 816.
- (1998) J. Cryst. Growth , vol.189-190 , pp. 816
- Zohta, Y.¹ Kuroda, H.² Nii, R.³ Nakamura, S.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.