0.12-μm gate III-V nitride HFET's with high contact resistances

IEEE Electron Device Letters

Volumn 18, Issue 4, 1997, Pages 141-143

  Burm, Jinwook ^a   Chu, Kenneth ^a   Schaff, William J ^a   Eastman, Lester F ^a   Khan, M Asif ^b   Chen, Qisheng ^b   Yang, J W ^b   Shur, Michael S ^c  

^a Cornell University   (United States)

^b APA Optronics   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FREQUENCY RESPONSE; GATES (TRANSISTOR); HETEROJUNCTIONS; NITRIDES; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE;

CONTACT RESISTANCE; NITRIDE WAFER;

FIELD EFFECT TRANSISTORS;

EID: 0031125937     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.563309     Document Type: Article

References (11)

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