Design considerations and experimental analysis for silicon carbide power rectifiers

Solid-State Electronics

Volumn 43, Issue 10, 1999, Pages 1945-1962

  Khemka, V ^a   Patel, R ^a   Chow, T P ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC LOSSES; MOS DEVICES; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

SILICON CARBIDE SCHOTTKY RECTIFIER;

ELECTRIC RECTIFIERS;

EID: 0033321111     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00155-0     Document Type: Article

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