High current, common-base GaN/AlGaN heterojunction bipolar transistors

Electrochemical and Solid-State Letters

Volumn 3, Issue 3, 2000, Pages 144-146

  Cao, X A ^a   Dang, G T ^a   Zhang, A P ^a   Ren, F ^a   Van Hove, J M ^b   Klaassen, J J ^b   Polley, C J ^b   Wowchak, A M ^b   Chow, P P ^b   King, D J ^b   Abernathy, C R ^a   Pearton, S J ^a,b  

^a University of Florida   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE; THRESHOLD VOLTAGE;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; POWER DENSITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034158771     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390983     Document Type: Article

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