Piezoelectric charge densities in AlGaN/GaN HFETs

Electronics Letters

Volumn 33, Issue 14, 1997, Pages 1230-1231

  Asbeck, P M ^a   Yu, E T ^a   Lau, S S ^a   Sullivan, G J ^b   Van Hove, J ^c   Redwing, J ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

^c SVT ASSOCIATES   (United States)

^d Advanced Technology Materials Inc   (United States)

Author keywords

Field effect transistors; Gallium nitride; Microwave power transistors

Indexed keywords

CARRIER COMMUNICATION; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); MICROWAVE POWER TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0031551223     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970843     Document Type: Article

References (9)

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