AIN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact

Electronics Letters

Volumn 34, Issue 6, 1998, Pages 592-593

  Kawai, H ^a   Hara, M ^a   Nakamura, F ^a   Imanaga, S ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATING MATERIALS; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

INSULATED GATE HETEROSTRUCTURES;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0032025089     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980464     Document Type: Article

References (7)

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