Al composition dependence of breakdown voltage in AlxGa1-xN Schottky rectifiers

Applied Physics Letters

Volumn 76, Issue 13, 2000, Pages 1767-1769

  Zhang, A P ^a   Dang, G ^a   Ren, F ^a   Han, J ^b   Polyakov, A Y ^c   Smirnov, N B ^c   Govorkov, A V ^c   Redwing, J M ^d   Cao, X A ^e   Pearton, S J ^e  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c INSTITUTE OF RARE METALS   (Russian Federation)

^d Epitronics   (United States)

^e UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001518843     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126161     Document Type: Article

References (16)

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