Low-frequency noise in AlGaN/GaN heterostructure field effect transistors

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 222-224

  Kuksenkov, D V ^a   Temkin, H ^a   Gaska, R ^b   Yang, J W ^c  

^a Department of Electrical and Computer Engineering   (United States)

^b APA Optronics   (United States)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FREQUENCY RESPONSE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

HETEROINTERFACES;

FIELD EFFECT TRANSISTORS;

EID: 0032121634     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701423     Document Type: Article

References (12)

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