High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors

Applied Physics Letters

Volumn 69, Issue 25, 1996, Pages 3872-3874

  Aktas, Ozgur ^a   Fan, Z F ^a   Mohammad, S N ^a   Botchkarev, A E ^a   Morkoc H ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3242764889     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117133     Document Type: Article

References (7)

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2. O. Aktas, W. Kim, Z. Fan, F. Stengel, A. E. Botchkarev, A. Salvador, B. Sverdlov, S. N. Mohammad, and H. Morkoç, Technical Digest of the International Electron Devices Meeting (Institution of Electrical and Electronics Engineers, Piscataway, New Jersey, 1995), p. 205.
3. W. Kruppa, S. C. Binari, and K. Doverspike, Electron. Lett. 31, 1951 (1995).
4. Z. Fan, S. N. Mohammad, O. Aktas, A. E. Botchkarev, A. Salvador, and H. Morkoç. Appl. Phys. Lett. 69, 1229 (1996).
5. Y.-F. Wu, B. P. Keller, S. Keller, D. Kapolnek, S. P. Denbaars, and U. K. Mishra, IEEE Device Research Conference Proceedings, 1996.
6. M. A. Khan, M. S. Shur, and Q. Chen, Appl. Phys. Lett. 68, 3022 (1996).
7. J. Burm, W. J. Schaff, L. F. Eastman, H. Amano, and I. Akasaki, Appl. Phys. Lett. 68, 2849 (1996).