CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 584-585

  Khan, M Asif ^a   Chen, Q ^a   Shur, Michael S ^b,c,f   Dermott, B T ^d   Higgins, J A ^d   Burm, J ^e   Schaff, W J ^e   Eastman, L F ^e  

^a APA Optronics   (United States)

^b University of Virginia   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d ROCKWELL SCIENCE CENTER   (United States)

^e Cornell University ^*  (United States)

^f IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; FABRICATION; HETEROJUNCTIONS; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 0030399547     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545778     Document Type: Article

References (8)

1. Q. Chen, M. A. Khan, J. W. Yang, C. J. Sun, M. S. Shur, and H. Park. "High transconductance heterosturcture field effect transistors based on AlGaN/GaN." Appl. Phys. Lett., vol. 69. pp. 794-796, Aug. 1996.
2. M.A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, and J. A. Higgins, "Microwave operation of GaN/AlGaN doped channel heterosrtucture field effect transistor." IEEE Electron Device Lett., vol. 17. no. 7. pp. 325-328, 1996.
3. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, "Short channel GaN/AlGaN doped channel heterostructrure field effect transistors with 36.1 cutoff frequency," Electron. Lett., vol. 32, p. 357, 1996.
4. P. P. Ruden, M. S. Shur, A. I. Akinwande, J. Nohava, D. Grider, and J. H. Back, "AlGaAs-IngaAs-GaAs quantum well doped cahnnel heterostructure field effect transistors," IEEE Trans Electron Devices, vol. 37, no. 10, pp. 2171-2175, 1990.
5. Some of our data were presented at the High-Temperature Electronics Conference, Albuquerque, NM, June, 1996.
6. M. S. Shur, GaAS Devices and circuits, New York: Plenum, 1987.
7. S.H. Wemple and H. C. Huang, "Thermal design of power GaAs FET's," in GaAs FET Principles and Technology, J. V. DiLorenzo and D. D. Khandelwal, Eds. Dedham, MA: Artech House, 1982, pp. 309-347.
8. J. Burm, W. J. Schaff, and L. F. Eastman, "The fabricatoin of resessed gate GaN MODFET's," in proc. 22nd Int. Symp. GaAs and Rlated Compounds, Cheju, Korea, Aug. 28-Sep. 1, 1995, Institute Conference Series no. 145: ch. 4, pp. 605-608, 1996.