Device characteristics of scaled GaN/AIGaN MODFETs

Electronics Letters

Volumn 34, Issue 8, 1998, Pages 811-812

  Nguyen, N X ^a   Nguyen, C ^a   Grider, D E ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

THICK-AIRBRIDGE TECHNOLOGY;

GATES (TRANSISTOR);

EID: 0032046248     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980576     Document Type: Article

References (7)

1. FAN, Z., LU, C., BOTCHKAREV, A.E., TANG, H., SALVADOR, A., AKTAS, O., and MORKOC, H.: 'AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)', Electron. Lett., 1997, 33, pp. 814-815
2. WU, Y.-F., KELLER, B.P., KELLER, S., NGUYEN, N.X., LE, M., NGUYEN, C., JENKINS, T.J., KEHIAS, L.T., DENBAARS, S.P., and MISHRA, U.K.: 'High speed and high power AlGaN/GaN MODFETs'. 55th Annual Device Research Conf., Ft. Collins, CO, 1997
3. 0.5N/GaN MODFETs with power density > 3W/mm at 18GHz', Electron. Lett., 1997, 33, pp. 1742-1743
4. GASKA, R., CHEN, Q., YANG, J., KHAN, A.M., SHUR, M.S., PING, A., and ADESIDA, I.: 'AlGaN-GaN heterostructure FETs with offset gate design', Electron. Lett., 1997, 33, pp. 1255-1257
5. THIBEAULT, B.J., KELLER, B.P., WU, Y.-F., FINI, P., MISHRA, U.K., NGUYEN, C., NGUYEN, N.X., and LE, M.: 'High performance and large area flip-chip bonded AlGaN/GaN MODFETs'. Int. Electron Devices Meeting, Washington DC, 1997
6. NGUYEN, C., NGUYEN, N.X., and GRIDER, D.E.: 'High performance GaN/AlGaN MODFETs grown by RF-Assisted MBE', to be published in Electron. Lett.
7. max and > 100 V Gate-drain breakdown voltage', Electron. Lett., 1997, 33, pp. 334-335