Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

Applied Physics Letters

Volumn 73, Issue 6, 1998, Pages 809-811

  Arulkumaran, S ^a   Egawa, T ^a   Ishikawa, H ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21944449679     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122009     Document Type: Article

References (12)

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