Measured microwave power performance of AlGaN/GaN MODFET

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 455-457

  Wu, Y F ^b   Keller, B P ^b   Keller, S ^b   Kapolnek, D ^b   Denbaars, S P ^b   Mishra, U K ^a,b  

^a IEEE

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EFFICIENCY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE MEASUREMENT; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

GATE LENGTH DEVICES; MICROWAVE POWER; MODFET DEVICES; OUTPUT POWER DENSITY; POWER ADDED EFFICIENCY;

FIELD EFFECT TRANSISTORS;

EID: 0030241696     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536291     Document Type: Article

References (6)

1. J. W. Palmour, C. E. Weitzel, K. I. Nordquist, and C. H. Carter, "4H silicon carbide MESFET with 2.8 W/mm RF power density," in Dig. 52nd Ann. Device Research Conf. Univ. of Colorado, Boulder, June 1994, paper IIB-3.
2. K. Moore, C. Weitzel, K. Nordquist, L. Pond III, J. Palmour, S. Allen, and C. Carter Jr., "Bias dependence of RF power characteristics of 4H-SiC MESFET's." in Proc. IEEE Cornell Conf. Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, Ny, 1995, p. 40-46.
3. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, "Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 (GHz) cutoff frequency," Electron. Lett, vol. 32, no. 4, pp. 357-358, 1996.
4. R. J. Trew and M. W. Shin, "High frequency, high temperature fieldeffect transistors fabricated from wide bandgap semiconductors," Int. J. High Speed Electron, Syst., vol. 6, no. 1, 1995, pp. 211-236.
5. Y.-F. Wu, B. P. Keller, S. Keller, D. Kapolnek, S. P. Denbaars and U. K. Mishra, "Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors," Appl. Phys. Lett., vol. 69, no. 10, 1996.
6. N. S. Mansours, K. W. Kim, and M. A. Littlejohn, "Theoretical study of electron transport in gallium nitride," J. Appl. Phys., vol. 77, no. 6, Mach 15, 1995.