Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1453-1456

  Hong, M ^a   Anselm, K A ^a   Kwo, J ^a   Ng, H M ^a   Baillargeon, J N ^a   Kortan, A R ^a   Mannaerts, J P ^a   Cho, A Y ^a   Lee, C M ^b   Chyi, J I ^b   Lay, T S ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC INSULATING MATERIALS; ELECTRONIC DENSITY OF STATES; GADOLINIUM COMPOUNDS; INTERFACES (MATERIALS); MISFET DEVICES; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS;

GADOLINIUM OXIDE; GALLIUM NITRIDE;

SEMICONDUCTOR DIODES;

EID: 0034350479     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591402     Document Type: Article

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