300°C GaN/AlGaN heterojunction bipolar transistor

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Ren, Fan ^a   Abernathy, Cammv R ^a   Van Hove, J M ^b   Chow, P P ^b   Hickman, R ^b   Klaasen, J J ^b   Kopf, R F ^c   Cho, Hyun ^a   Jung, K B ^a   La Roche, J R ^a   Wilson, R G ^d   Han, J ^e   Shul, R J ^e   Baca, A G ^e   Pearton, S J ^a  

^a University of Florida   (United States)

^b SVT ASSOCIATES   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d CHARLES EVANS AND ASSOCIATES   (United States)

^e SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DOPING (ADDITIVES); DRY ETCHING; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; IONIZATION; LIGHT EMITTING DIODES; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTORESISTS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; STRESSES;

PIEZOELECTRIC STRESSES; THERMAL MANAGEMENT; UNDOPED BUFFERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4043059231     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300001137     Document Type: Article

References (18)

1. M. S. Shur, Mater. Res. Soc. Symp. Proc. 483, 15 (1998).
2. M.S. Shur and M.A. Khan, "GaN Based Electronics and Photonics", in High Temperature Electronics, ed. M. Willander and H.L. Hartnagel (Chapman and Hall, London 1996), pp. 297-321
3. M. N. Yoder, IEEE Trans. Electr. Dev. 43, 1633 (1996).
4. T. P. Chow, N. Ramungul, M. Ghezzo, Mater. Res. Soc. Symp. Proc. 483, 89 (1998).
5. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho, Jpn. J. Appl. Phys. 36, L1568 (1997).
6. J. I. Pankove, M. Leksono, S. S. Chang, C. Walker, B. Van Zeghbroeck, MRS Internet J. Nitride Semicond. Res. 1, 39 (1996).
7. J.M. Van Hove, P.P. Chow, J.J. Klaassen, R. Hickman, A.M. Wowchak, D.R. Croswell, C. Polley, Mater. Res. Soc. Symp. Proc. 468, 51 (1997).
8. RJ Shul, GB McClellan, SA Casalnuovo, DJ Rieger, SJ Pearton, C Constantine, C Barratt, RF Karlicek, C Tran, M Schurman, Appl. Phys. Lett. 69, 1119-1121 (1996).
9. S.J. Pearton and R.J. Shul, "Wet and Dry Etching of GaN", in GaN I. ed. J.I. Penkove and T.D. Moustakas (Academic Press, NY 1998)
10. L. F. Lester, D. J. King, L. Zhang, J. C. Ramer, S. D. Hersee, J. C. Zolper, Electrochem. Soc. Proc. 97-1, 171 (1997).
11. D.J. King, L. Zhang, J.C. Ramer, S.D. Hersee, L.F. Lester, Mater. Res. Soc. Symp. Proc. 468, 421 (1997).
12. Alexei Bykhovski, Boris Gelmont, Michael Shur, J. Appl. Phys. 74, 6734-6739 (1993).
13. E. T. Yu, P. M. Asbeck, S. S. Lau, G. J. Sullivan, Electrochem. Soc. Proc. 98-2, 468 (1998).
14. R. Gaska, J. W. Yang, A. D. Bykhovski, M. S. Shur, V. V. Kaminskii, S. Soloviov, Appl. Phys. Lett. 72, 64-66 (1998).
15. P.M. Asbeck, E.T. Yu, S.S. Lau, G.J. Sullivan, J. Van Hove, J. Redwing, Electron. Lett. 33, 1230-1231 (1997).
16. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, S. S. Lau, Appl. Phys. Lett. 71, 2794 (1997).
17. See "Topics in Growth and Device Processing of III-V Semiconductors", S.J. Pearton, C.R. Abernathy and F. Ren (World Scientific, Singapore, 1997) Chapter 2
18. H. Simawaki, Inst. Phys. Conf. Ser. 129, 271 (1993).