Passivation of GaAs using (Ga2O3)1 - x(Gd2O3)x, 0≤x≤1.0 films

Applied Physics Letters

Volumn 75, Issue 8, 1999, Pages 1116-1118

  Kwo, J ^a   Murphy, D W ^a   Hong, M ^a   Opila, R L ^a   Mannaerts, J P ^a   Sergent, A M ^a   Masaitis, R L ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDATION; PASSIVATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH ELECTRICAL BREAKDOWN STRENGTH; LOW INTERFACIAL DENSITY OF STATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032615339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124614     Document Type: Article

References (16)

1. A. Revesz and K. Zaininger, J. Am. Ceram. Soc. 46, 606 (1963).
2. O. Weinreich, J. Appl. Phys. 37, 2924 (1966).
3. T. Mimura, K. Odani, N. Yokoyama, Y. Nakayama, and M. Fukuta, IEEE Trans. Electron Devices 25, 573 (1978).
4. W. T. Tsang, Appl. Phys. Lett. 33, 429 (1978).
5. Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by C. W. Wilmsen (Plenum, New York, 1985).
6. M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sci. Technol. B 14, 2297 (1996).
7. L. W. Tu, E. F. Schubert, M. Hong, and G. J. Zydzik, J. Appl. Phys. 80, 6448 (1996).
8. M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo, R. L. Opila, S. N. G. Chu, N. Moriya, and F. Ren, IEEE Trans. Electron Devices 44, 214 (1997).
9. F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, Tech. Dig. Int. Electron Devices Meet., 943 (1996).
10. M. Hong, J. Cryst. Growth 150, 277 (1995).
11. M. Hong, M. A. Marcus, J. Kwo, J. P. Mannaerts, A. M. Sergent, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, J. Vac. Sci. Technol. B 16, 1395 (1998).
12. M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science 283, 1897 (1999).
13. M. Fleischer and H. Meixner, J. Appl. Phys. 74, 300 (1993).
14. T. Harwig and J. Schoonman, J. Solid State Chem. 23, 205 (1978).
15. L. N. Cojocaru and I. D. Alecu, Z. Phys. Chem. (Munich) 84, 325 (1973).
16. M. Passlack and J. K. Abrokwah, U.S. patent No. 5,597,768 (28 January 1997).