High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Electronics Letters

Volumn 33, Issue 16, 1997, Pages 1413-1415

  Chen, Q ^a   Yang, J W ^a   Kahn, M A ^a   Ping, A T ^a   Adesida, I ^a  

^a NONE

Author keywords

Field effect transistors; Silicon carbide

Indexed keywords

HETEROJUNCTIONS; NITROGEN COMPOUNDS; PERFORMANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY;

HIGH CURRENT DENSITY FET;

FIELD EFFECT TRANSISTORS;

EID: 0031193105     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970933     Document Type: Article

References (5)

1. CHEN, Q., GASKA, R., KHAN, M.A., SHUR, M.S., PING, A.T., ADESIDA, I., BURM, J., SCHAFF, W.J., and EASTMAN, L.F.: 'Microwave performance of 0.25 micron doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures', Electron. Lett., 1997, 33, (7), pp. 637-639
2. MOHAMMAD, S.N., FAN, Z.-F., SALVADOR, A., AKTAS, O., BOTCHKAREV, A.E., KIM, W., and MORKOC, H.: 'Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors', Appl. Phys. Lett., 1996, 69, (10), p. 1420
3. WU, Y.-F., KELLER, B.P., KELLER, S., KAPOLNEK, D., KOZODOY, P., DENBAARS, S.P., and MISHRA, U.K.: 'Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors', Appl. Phys. Lett, 1996, 69, (10), pp. 1438-1440
4. CHEN, Q., YANG, J.W., GASKA, R., KHAN, M.A., SHUR, M.S., SULLIVAN, G.J., SAILOR, A.L., HIGGINS, J.A., PING, A.T., and ADESIDA, I.: 'High power microwave 0.25micron gate doped channel GaN/ AlGaN heterostructure field effect transistor', submitted to IEEE Electron Device Lett.
5. BINARI, S.C., REDWING, J.M., KELNER, G., and KRUPPA, W.: 'AlGaN/ GaN HEMTs grown on SiC substrates', Electron. Lett., 1997, 33, (3), pp. 242-243