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Volumn 69, Issue 10, 1996, Pages 1420-1422
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Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors
a a a a a a a,b |
Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC BREAKDOWN;
ELECTRIC CURRENT MEASUREMENT;
EMISSION SPECTROSCOPY;
GATES (TRANSISTOR);
LEAKAGE CURRENTS;
LIGHTING;
PHOTOLUMINESCENCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM WELLS;
TRANSCONDUCTANCE;
HETEROINTERFACE;
MODFETS;
PHOTOLUMINESCENCE SPECTRUM;
FIELD EFFECT TRANSISTORS;
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EID: 0030565356
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.117601 Document Type: Article |
Times cited : (58)
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References (11)
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