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Volumn 69, Issue 10, 1996, Pages 1420-1422

Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; EMISSION SPECTROSCOPY; GATES (TRANSISTOR); LEAKAGE CURRENTS; LIGHTING; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

EID: 0030565356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117601     Document Type: Article
Times cited : (58)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.