GaN/AlGaN MODFET with 80GHz fmax and >100V gate-drain breakdown voltage

Electronics Letters

Volumn 33, Issue 4, 1997, Pages 334-335

  Nguyen, N X ^a   Keller, B P ^b   Keller, S ^b   Wu, Y F ^b   Le, M ^a   Nguyen, C ^a   Denbaars, S P ^b   Mishra, U K ^b   Grider, D ^a  

^a Hughes Aircraft Co   (United States)

^b University of California at Santa Barbara   (United States)

Author keywords

MODFET; Semiconductor growth

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE DEVICES; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

MODULATION DOPED FIELD EFFECT TRANSISTOR (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0031078426     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970174     Document Type: Article

References (6)

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