High voltage GaN Schottky rectifiers

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 692-696

  Dang, Gerard T ^a   Zhang, Anping P ^a   Ren, Fan ^b   Cao, Xianan A ^c   Pearton, Stephen J ^d   Cho, Hyun ^e   Han, Jung ^b   Chyi, Jenn Inn ^c   Lee, C M ^d   Chuo, C C ^e   George Chu, S N ^a   Wilson, Robert G ^c  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d LUCENT TECHNOLOGIES   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

REVERSE BREAKDOWN VOLTAGES; REVERSE LEAKAGE CURRENTS;

SOLID STATE RECTIFIERS;

EID: 0033879748     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830981     Document Type: Article

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