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Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7931-7934

High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor

(2) Yoshida, Seikoh a Suzuki, Joe a

a FURUKAWA ELECTRIC CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRESS ANALYSIS; THERMAL STRESS;

GALLIUM NITRIDE; GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

MESFET DEVICES;

EID: 0032620512 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.370610 Document Type: Article

Times cited : (77)

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