High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 922-924

  Sullivan, G J ^a   Higgins, J A ^a   Chen, M Y ^a   Yang, J W ^a,c   Chen, Q ^b   Pierson, R L ^a   McDermott, B T ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

^b APA Optronics   (United States)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032047780     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980601     Document Type: Article

References (13)

1. KHAN, M.A., CHEN, Q., SHUR, M., McDERMOTT, B.T., HIGGINS, J.A., BURM, J., SCHAFF, W., and EASTMAN, L.F.: 'Short channel AlGaN/ GaN doped channel field effect transistors with 36.1GHz cut off frequency', Electron. Lett., 1996, 32, pp. 357-358
2. KHAN, M.A., CHEN, Q., SHUR, M., MCDERMOTT, B.T., HIGGINS, J.A., BURM, J., SCHAFF, W., and EASTMAN, L.F.: 'CW operation of short channel AlGaN/GaN doped channel HFETs at 10 and 15GHz', IEEE Electron Device Lett., 1996, 17, pp. 584-585
3. WU, Y.F., KELLER, B.P., KELLER, S., KAPOLNEK, D., KOZODY, P., DENBAARS, S.P., and MISHRA, U.K.: 'Very high breakdown voltage and large transconductance realised on GaN heterojunction FETs', Appl. Phys. Lett., 1996, 69, pp. 1438-1440
4. WU, Y.F., KELLER, B.P., FINI, P., PUSL, J., LE, M., NGUYEN, N.X., NGUYEN, C., WIDMAN, D., KELLER, S., DENBAARS, S.P., and MISHRA, U.K.: 'Short-channel AlGaN/GaN MODFETs with power density > 3W/mm at 18GHz', Electron. Lett., 1997, 33 pp. 1742-1743
5. GRIDER, D.: 'Performance of GaN power FETs'. 1997 MAFET Thrust 3 Review and Design Workshop, Fairfax, VA 22033, 28 October 1997
6. BINARI, S.C., REDWING, J.M., KELNER, G., and KRUPPA, W.: 'AlGaN/ GaN HEMTs grown on SiC substrates', Electron. Lett., 1997, 33, pp. 242-243
7. GASKA, R., CHEN, Q., YANG, J.Y., OSINSKY, A., KHAN, M.A., and SHUR, M.: 'High temperature performance of AlGaN/GaN HFETs on SiC substrates', IEEE Electron. Device. Lett., 1997, 18, pp. 492-494
8. Cree Research, Inc., Durham, NC 27713, USA
9. ASBECK, P.M., YU, E.T., LAU, S.S., SULLIVAN, G.J., VAN HOVE, J., and REDWING, J.: 'Piezoelectric charge densities in AlGaN/GaN HFETs', Electron. Lett., 1997, 33, pp. 1230-1231
10. YU, E.T., SULLIVAN, G.J., ASBECK, P.M., WANG, C.D., QIAO, D., and LAU, S.S.: 'Measurement of piezoelectrically induced charge in GaN/ AlGaN heterostructure field-effect transistors', Appl. Phys. Lett., 1997, 71, pp. 2794-2796
11. ASBECK, P.M.: Private communication
12. LIU, Q.Z., YU, L.S., DENG, F., LAU, S.S., CHEN, Q., YANG, J.Y., and KHAN, M.A.: 'Study of contact formation in AlGaN/GaN heterostructures', Appl. Phys. Lett., 1997, 71, pp. 1658-1660
13. PING, A.T., KHAN, M.A., CHEN, Q., YANG, J.W., and ADESIDA, I.: 'Dependence of DC and RF characteristics on gate length in high current AlGaN/GaN HFETs', Electron. Lett., 1997, 33, pp 1081-1082