GaN/AlGaN HBT fabrication

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 239-244

  Ren, F ^a   Han, J ^b   Hickman, R ^c   Van Hove, J M ^c   Chow, P P ^c   Klaassen, J J ^c   Laroche, J R ^a   Jung, K B ^d   Cho, H ^d   Cao, X A ^d   Donovan, S M ^d   Kopf, R F ^e   Wilson, R G ^f   Baca, A G ^b   Shul, R J ^b   Zhang, L ^b   Willison, C G ^b   Abernathy, C R ^b   Pearton, S J ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SVT ASSOCIATES   (United States)

^d University of Florida   (United States)

^e LUCENT TECHNOLOGIES   (United States)

^f NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DRY ETCHING; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; ANNEALING TEMPERATURE; DC CURRENT GAINS; GALLIUM NITRIDE; LOW DAMAGE DRY ETCHING; MESA FABRICATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 18244419619     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00229-4     Document Type: Article

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