AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

IEEE Electron Device Letters

Volumn 21, Issue 2, 2000, Pages 63-65

  Khan, M Asif ^a   Hu, X ^a   Sumin, G ^a   Lunev, A ^a   Yang, J ^a   Gaska, R ^b   Shur, M S ^c  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

ALUMINUM GALLIUM NITRIDE; HALL MOBILITY; TRIMETHYLINDIUM;

MOSFET DEVICES;

EID: 0034141006     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.821668     Document Type: Article

References (7)

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