Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18GHz

Electronics Letters

Volumn 33, Issue 20, 1997, Pages 1742-1743

  Wu, Y F ^a   Keller, B P ^a   Fini, P ^a   Pusl, J ^b   Le, M ^c   Nguyen, N X ^c   Nguyen, C ^c   Widman, D ^b   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

^b BOEING COMPANY   (United States)

^c Hughes Aircraft Co   (United States)

Author keywords

Microwave devices; MODFET

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; MICROWAVE DEVICES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSCONDUCTANCE;

POWER DENSITY;

GATES (TRANSISTOR);

EID: 0031223714     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971127     Document Type: Article

References (8)

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