Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

Applied Physics Letters

Volumn 68, Issue 4, 1996, Pages 514-516

  Khan, M Asif ^a   Chen, Q ^a   Sun, C J ^a   Yang, J W ^a   Blasingame, M ^a   Shur, M S ^b   Park, H ^b  

^a APA Optronics   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544459054     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116384     Document Type: Article

References (5)

1. M. A. Khan, J. N. Kuznia, D. T. Olson, W. Schaff, J. Burm, and M. S. Shur, Appl. Phys. Lett. AIP 65, 1121 (1994).
2. M. A. Khan, M. S. Shur, J. N. Kuznia, J. Burm, and W. Schaff, Appl. Phys. Lett. AIP 66, 1083 (1995).
3. S. Binari, L. B. Rowland, W. Kruppa, G. Kelner, K. Doverspike, and D. K. Gatskill, Electron. Lett. INS 30, 1248 (1994).
4. S. Binari, L. B. Rowland, W. Kruppa, G. Kelner, K. Doverspike, and D. K. Gatskill, presented at the 21st International Symposium on Compound Semiconductors, San Diego, September 1994.
5. M. Asif Khan, J. N. Kuznia, M. S. Shur, C. Eppers, J. Brum, and W. Schaff, presented at the 21st International Symposium on Compound Semiconductors, San Diego, September 1994.