Enhancement-Mode p-Channel GaAs MOSFETs on Semi-Insulating Substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 943-945

  Ren, F ^a   Hong, M W ^a   Hobson, W S ^a   Kuo, J M ^a   Lothian, J R ^a   Mannaerts, J P ^a   Kwo, J ^a   Chen, Y K ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); ION IMPLANTATION; OXIDES; PERMITTIVITY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSCONDUCTANCE;

DRAIN CURRENT; GADOLINIUM OXIDE; GALLIUM OXIDE; GATE VOLTAGE; INVERSION CHANNEL; SEMI INSULATING SUBSTRATES;

MOSFET DEVICES;

EID: 0030386788     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554137     Document Type: Conference Paper

References (2)

1. M. Passlack, M. Hong, and J. P. Mannaerts, Appl, Phys. Lett., 68, '1099(1996).
2. M. Hong, M. Passlack, J. P. Mannaerts, T. D.Harris, M. L. Shnoes, R. L. Opila, and H. W. Krautter(to be published in Solid-state Electronics).