Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1081-1083

  Ping, A T ^a   Asif Khan, M ^b,c   Chen, Q ^b   Yang, J W ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b APA Optronics   (United States)

^c University of South Carolina   (United States)

Author keywords

Field effect transistors; Gallium nitride

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

CUTOFF FREQUENCY;

GATES (TRANSISTOR);

EID: 0031554334     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970702     Document Type: Article

References (7)

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