Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz

IEEE Electron Device Letters

Volumn 20, Issue 7, 1999, Pages 323-325

  Li, R ^a   Cai, J ^a   Wong, L ^a   Chen, Y ^a   Wang, K L ^a   Smith, R P ^b   Martin, S C ^b   Boutros, K S ^c   Redwing, J M ^c  

^a University of California   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c Epitronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ETCHING; GATES (TRANSISTOR); HETEROJUNCTIONS; METALLIZING; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; HIGH POWER MICROWAVE RADAR; MAXIMUM OSCILLATION FREQUENCY; SATURATED CURRENT DENSITY; SEMI INSULATING SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 0033164972     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.772364     Document Type: Article

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