Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Electronics Letters

Volumn 33, Issue 7, 1997, Pages 637-639

  Chen, Q ^a   Gaska, R ^a   Asif Khan, M ^a   Shur, M S ^b   Ping, A ^c   Adesida, I ^c   Burm, J ^d   Schaff, W J ^d   Eastman, L F ^d  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d Sch of Elec and Comp Engineering   (United States)

Author keywords

Field effect transistors; Microwave transistors

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; HETEROJUNCTIONS; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0031102123     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970403     Document Type: Article

References (12)

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