High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 649-654

  Cao, X A ^a   Van Hove, J M ^b   Klaassen, J J ^b   Polley, C J ^b   Wowchack, A M ^b   Chow, P P ^b   King, D J ^b   Ren, F ^a   Dang, G ^a   Zhang, A P ^a   Abernathy, C R ^a   Pearton, S J ^a  

^a University of Florida   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; HIGH TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

BIPOLAR JUNCTION TRANSISTORS; OFFSET VOLTAGES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033882740     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00291-9     Document Type: Article

References (21)

1. Shur M.S. Solid-State Electron. 42:1998;2131.
2. Brown E.R. Solid-State Electron. 42:1998;2119.
3. Pearton S.J., Zolper J.C., Shul R.J., Ren F. J. Appl. Phys. 86:1999;1.
4. Mohammad S.N., Morkoc H. Prog. Quantum Electron. 20:1996;361.
5. Wu Y.F., Keller B.P., Fini P., Keller S., Jenkins T.Z., Kehias L.T., Den Baars S.P., Mishra U.K. IEEE Electron. Dev. Lett. EDL. 19:1998;50.
6. Foutz B.E., Eastman L.F., Bhapkar U.V., Shur M.S. Appl. Phys. Lett. 70:1997;2849.
7. Asbeck P.M., Yu E.T., Lau S.S., Sullivan G.J., Van Hove J., Redwing J. Electron. Lett. 33:1997;1230.
8. Nguyen N.X., Nguyen C., Grider D.E. Electron. Lett. 34:1998;811.
9. Chen Q., Yang J.W., Gaska R., Khan M.A., Shur M.S., Sullivan G.J., Sailor A.L., Higgins J.A., Ping A.T., Adesida I. IEEE Electron. Dev. Lett. EDL. 19:1998;44.
10. Fan Z., Lu C., Botchkarov A., Tang H., Salvador A., Aktas O., Kim W., Morkoc H. Electron. Lett. 33:1997;814.
11. Zolper J.C., Shul R.J., Baca A.G., Wilson R.G., Pearton S.J., Stall R.A. Appl. Phys. Lett. 65:1996;2273.
12. Ren F., Hong M., Chu S.N.G., Marcus M., Schurmann M.J., Baca A.G., Pearton S.J., Abernathy C.R. Appl. Phys. Lett. 23:1998;3893.
13. Chyi J.I., Lee C.M., Chuo C.C., Chi G.C., Dang G., Zhang A.P., et al. MRS Internet J. Nitride Semicond. Res. 4:1999;8.
14. Yoshida S., Suzuki J. J. Appl. Phys. 85:1999;7931.
15. Ren F., Abernathy C.R., Van Hove J.M., Chow P.P., Hickman R., Klaassen J.J., et al. MRS Internet J. Nitride Semicond. Res. 3:1998;41.
16. Han J., Baca A.G., Shul R.J., Willison C.G., Zhang L., Ren F., et al. Appl. Phys. Lett. 74:1999;2702.
17. McCarthy L., Kozodoy P., Rodwell M., Den Baars S., Mishra U.K. IEEE Electron. Dev. Lett. ED. 20:1999;277.
18. Van Hove J.M., Hickman R., Klaassen J.J., Chow P.P., Ruden P.P. Appl. Phys. Lett. 70:1997;282.
19. Dyakonova N., Dickens A., Shur M.S., Gaska E., Yang J.W. Appl. Phys. Lett. 72:1998;2562.
20. Dmitriev V.A., Irvine K.G., Carter C.H. Jr, Kuznetsov N.I., Kalinina E.V. Appl. Phys. Lett. 68:1996;229.
21. Osinsky A., Shur M.S., Gaska R. Mater. Res. Soc. Symp. Proc. 512:1998;15.