Common-base operation of GaN bipolar junction transistors

Electrochemical and Solid-State Letters

Volumn 3, Issue 7, 2000, Pages 333-334

  Cao, X A ^a,d   Dang, G T ^a,d   Zhang, A P ^a   Ren, F ^a,d   Abernathy, C R ^a,d   Pearton, S J ^a,d   Van Hove, J M ^b   Klaassen, J J ^b   Polley, C J ^b   Wowchack, A M ^b   Chow, P P ^b   King, D J ^b   Chu, S N G ^c,d  

^a University of Florida   (United States)

^b SVT ASSOCIATES   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE;

CURRENT DENSITY; DRY ETCHING; ELECTRIC BREAKDOWN OF SOLIDS; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 12944270576     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391140     Document Type: Article

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