AlGaN-GaN heterostructure FETs with offset gate design

Electronics Letters

Volumn 33, Issue 14, 1997, Pages 1255-1257

  Gaska, R ^a   Chen, Q ^a   Yang, J ^a   Asif Khan, M ^a,d   Shur, M S ^b   Ping, A ^c   Adesida, I ^c  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d University of South Carolina   (United States)

Author keywords

Field effect transistors

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

GATE TO DRAIN SEPARATION; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); SOURCE TO GATE DISTANCE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031551186     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970818     Document Type: Article

References (8)

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