High-temperature performance of AlGaN/GaN HFET's on SiC substrates

IEEE Electron Device Letters

Volumn 18, Issue 10, 1997, Pages 492-494

  Gaska, R ^a,b   Chen, Q ^a,b   Yang, J ^a,b   Osinsky, A ^a,b   Asif Khan, M ^a,b,c   Shur, M S ^a,d  

^a IEEE   (United States)

^b APA Optronics   (United States)

^c University of South Carolina ^*  (United States)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; HIGH TEMPERATURE PROPERTIES; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; SOURCE DRAIN CURRENT SATURATION; SOURCE DRAIN VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0031258039     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.624930     Document Type: Article

References (9)

1. S. C. Binari, J. M. Redwing, G. Keiner, and W. Kruppa, "AlGaN/GaN HEMT's grown on SiC substrates," Electron. Lett., vol. 33, no. 3, pp. 242-243, 1997.
2. M. Asif Khan, Q. Chen, M. S. Shur, B. T. Dermott, and J. A. Higgins, "Microwave operation of GaN/AlGaN doped channel heterostructure field effect transistors," IEEE Electron Device Lett., vol. 17, pp. 325-327, July 1996.
3. R. Gaska, Q. Chen, M. Asif Khan, A. Ping, I. Adesida, and M. S. Shur, "AlGaN-GaN heterostructure FET's with offset gate design," Electron. Lett., vol. 33, no. 14, pp. 1255-1257, July 1997.
4. Q. Chen, R. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Shaff, and L. F. Eastmann, "Microwave performance of 0.25-micron doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures," Electron. Lett., vol. 33, no. 7, pp. 637-639, Mar. 1997.
5. K. Lee, M. Shur, T. A. Fjeldly, and T. Ytterdal, Semiconductor Device Modeling for VLSI. Englewood Cliffs, NJ: Prentice-Hall, 1993
6. S. H. Wempel and H. C. Huang, GaAs FET Principles and Technology. Norwood, MA: Artech House, 1982, pp. 309-347.
7. H. F. Cooke, High-Power GaAs FET Amplifiers. Norwood, MA: Artech House, 1993, pp. 227-261.
8. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, "Large-band-gap SiC, III-V nitride, and H-VI ZnSe-based semiconductor device technologies," J. Appl. Phys., vol. 76, no. 3, pp. 1363-1398, 1994.
9. M. Asif Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burm, and W. Schaff, "Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C," Appl. Phys. Lett., vol. 66, no. 9, pp. 1083-1085, 1995.