Highly stable SrZrO3 bipolar resistive switching memory by Ti modulation layer

ECS Transactions

Volumn 28, Issue 2, 2010, Pages 411-420

  Wu, Ming Chi ^a   Lin, Meng Han ^a   Yeh, Yu Ting ^a   Lin, Chen Hsi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; MODULATION; RRAM; ZIRCONIUM COMPOUNDS;

ANNEALING TEMPERATURES; COMPLIANCE CURRENT; INTERFACIAL LAYER; OPERATION VOLTAGE; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; RETENTION BEHAVIOR;

STRONTIUM COMPOUNDS;

EID: 78650553742     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3372595     Document Type: Conference Paper

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