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Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

Resistive switching characteristics and mechanisms of Pt-embedded SrZrO3 memory devices

(4) Lin, Meng Han a Wu, Ming Chi a Lin, Chen Hsi b Tseng, Tseung Yuen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b WINBOND ELECTRONICS CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE THICKNESS; HIGH-RESISTANCE STATE; HIGH-VOLTAGES; MEMORY DEVICE; METAL LAYER; OHMIC CONDUCTION; P EMISSION; POSTANNEALING PROCESS; PT CLUSTERS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SRZRO; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION; TURN ON VOLTAGE;

PLATINUM; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; SWITCHING SYSTEMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

PLATINUM COMPOUNDS;

EID: 77954194246 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3437635 Document Type: Article

Times cited : (39)

References (14)

1
- 21644443347
- TDIMD5 0163-1918
- I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, and J. T. Moon, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 587.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 587
- Baek, I.G.¹ Lee, M.S.² Seo, S.³ Lee, M.J.⁴ Seo, D.H.⁵ Suh, D.S.⁶ Park, J.C.⁷ Park, S.O.⁸ Kim, H.S.⁹ Yoo, I.K.¹⁰ Chung, U.I.¹¹ Moon, J.T.¹²

2
- 33846571790
- TDIMD5 0163-1918
- D. Lee, D. Seong, H. J. Choi, I. Jo, R. Dong, W. Xiang, S. Oh, M. Pyun, S. Seo, S. Heo, M. Jo, D. K. Hwang, H. K. Park, M. Chang, M. Hasan, and H. Hwang, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 797.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2006 , pp. 797
- Lee, D.¹ Seong, D.² Choi, H.J.³ Jo, I.⁴ Dong, R.⁵ Xiang, W.⁶ Oh, S.⁷ Pyun, M.⁸ Seo, S.⁹ Heo, S.¹⁰ Jo, M.¹¹ Hwang, D.K.¹² Park, H.K.¹³ Chang, M.¹⁴ Hasan, M.¹⁵ Hwang, H.¹⁶

3
- 50249156872
- TDIMD5 0163-1918
- K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2007, 767.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 767
- Tsunoda, K.¹ Kinoshita, K.² Noshiro, H.³ Yamazaki, Y.⁴ Iizuka, T.⁵ Ito, Y.⁶ Takahashi, A.⁷ Okano, A.⁸ Sato, Y.⁹ Fukano, T.¹⁰ Aoki, M.¹¹ Sugiyama, Y.¹²

4
- 33748484256
- 3 memory films
- DOI 10.1109/LED.2006.880660
- C. C. Lin, B. C. Tu, C. C. Lin, C. H. Lin, and T. Y. Tseng, IEEE Electron Device Lett. EDLEDZ 0741-3106 27, 725 (2006). 10.1109/LED.2006.880660 (Pubitemid 44355888)
- (2006) IEEE Electron Device Letters , vol.27 , Issue.9 , pp. 725-727
- Lin, C.-C.¹ Tu, B.-C.² Lin, C.-C.³ Lin, C.-H.⁴ Tseng, T.-Y.⁵

5
- 36849041494
- 3 thin films
- DOI 10.1109/TED.2007.908867
- C. -C. Lin, C. -Y. Lin, M. -H. Lin, C. -H. Lin, and T. -Y. Tseng, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 3146 (2007). 10.1109/TED.2007. 908867 (Pubitemid 350225925)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.12 , pp. 3146-3151
- Lin, C.-C.¹ Lin, C.-Y.² Lin, M.-H.³ Lin, C.-H.⁴ Tseng, T.-Y.⁵

6
- 33947579332
- Resistance switching of copper doped MoOx films for nonvolatile memory applications
- DOI 10.1063/1.2715002
- D. Lee, D. Seong, I. Jo, F. Xiang, R. Dong, S. Oh, and H. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 90, 122104 (2007). 10.1063/1.2715002 (Pubitemid 46482237)
- (2007) Applied Physics Letters , vol.90 , Issue.12 , pp. 122104
- Lee, D.¹ Seong, D.-J.² Jo, I.³ Xiang, F.⁴ Dong, R.⁵ Oh, S.⁶ Hwang, H.⁷

7
- 39349110003
- Resistance switching characteristics in Li-doped NiO
- DOI 10.1063/1.2837102
- K. Jung, J. Choi, Y. Kim, H. Im, S. Seo, R. Jung, D. C. Kim, J. S. Kim, B. H. Park, and J. P. Hong, J. Appl. Phys. JAPIAU 0021-8979 103, 034504 (2008). 10.1063/1.2837102 (Pubitemid 351263973)
- (2008) Journal of Applied Physics , vol.103 , Issue.3 , pp. 034504
- Jung, K.¹ Choi, J.² Kim, Y.³ Im, H.⁴ Seo, S.⁵ Jung, R.⁶ Kim, D.⁷ Kim, J.-S.⁸ Park, B.H.⁹ Hong, J.P.¹⁰

8
- 38149100067
- JAPIAU 0021-8979. 10.1063/1.2829814
- M. J. Lee, Y. Park, S. E. Ahn, B. S. Kang, C. B. Lee, K. H. Kim, W. X. Xianyu, I. K. Yoo, J. H. Lee, S. J. Chung, Y. H. Kim, C. S. Lee, K. N. Choi, and K. S. Chung, J. Appl. Phys. JAPIAU 0021-8979 103, 013706 (2008). 10.1063/1.2829814
- (2008) J. Appl. Phys. , vol.103 , pp. 013706
- Lee, M.J.¹ Park, Y.² Ahn, S.E.³ Kang, B.S.⁴ Lee, C.B.⁵ Kim, K.H.⁶ Xianyu, W.X.⁷ Yoo, I.K.⁸ Lee, J.H.⁹ Chung, S.J.¹⁰ Kim, Y.H.¹¹ Lee, C.S.¹² Choi, K.N.¹³ Chung, K.S.¹⁴

9
- 34247561316
- 2 film memory devices
- DOI 10.1109/LED.2007.894652
- C. Y. Lin, C. Y. Wu, C. Y. Wu, T. C. Lee, F. L. Yang, C. Hu, and T. Y. Tseng, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 366 (2007). 10.1109/LED.2007.894652 (Pubitemid 46667430)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.5 , pp. 366-368
- Lin, C.-Y.¹ Wu, C.-Y.² Wu, C.-Y.³ Lee, T.-C.⁴ Yang, F.-L.⁵ Hu, C.⁶ Tseng, T.-Y.⁷

10
- 37549046069
- JAPIAU 0021-8979. 10.1063/1.2802990
- C. Y. Lin, C. Y. Wu, C. Y. Wu, T. Y. Tseng, and C. Hu, J. Appl. Phys. JAPIAU 0021-8979 102, 094101 (2007). 10.1063/1.2802990
- (2007) J. Appl. Phys. , vol.102 , pp. 094101
- Lin, C.Y.¹ Wu, C.Y.² Wu, C.Y.³ Tseng, T.Y.⁴ Hu, C.⁵

11
- 34547842595
- Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide
- DOI 10.1063/1.2760156
- W. Guan, S. Long, R. Jia, and M. Liu, Appl. Phys. Lett. APPLAB 0003-6951 91, 062111 (2007). 10.1063/1.2760156 (Pubitemid 47247131)
- (2007) Applied Physics Letters , vol.91 , Issue.6 , pp. 062111
- Guan, W.¹ Long, S.² Jia, R.³ Liu, M.⁴

12
- 54749136638
- EDLEDZ 0741-3106. 10.1109/LED.2008.2002879
- C. Y. Lin, M. H. Lin, M. C. Wu, C. H. Lin, and T. Y. Tseng, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 1108 (2008). 10.1109/LED.2008.2002879
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 1108
- Lin, C.Y.¹ Lin, M.H.² Wu, M.C.³ Lin, C.H.⁴ Tseng, T.Y.⁵

13
- 33846585095
- x O -metal heterostructures
- DOI 10.1063/1.2436720
- R. Dong, D. S. Lee, W. F. Xiang, S. J. Oh, D. J. Seong, S. H. Heo, H. J. Choi, M. J. Kwon, S. N. Seo, M. B. Pyun, M. Hasan, and H. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 90, 042107 (2007). 10.1063/1.2436720 (Pubitemid 46184642)
- (2007) Applied Physics Letters , vol.90 , Issue.4 , pp. 042107
- Dong, R.¹ Lee, D.S.² Xiang, W.F.³ Oh, S.J.⁴ Seong, D.J.⁵ Heo, S.H.⁶ Choi, H.J.⁷ Kwon, M.J.⁸ Seo, S.N.⁹ Pyun, M.B.¹⁰ Hasan, M.¹¹ Hwang, H.¹²

14
- 38349103053
- APPLAB 0003-6951. 10.1063/1.2834852
- W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, Appl. Phys. Lett. APPLAB 0003-6951 92, 022110 (2008). 10.1063/1.2834852
- (2008) Appl. Phys. Lett. , vol.92 , pp. 022110
- Chang, W.Y.¹ Lai, Y.C.² Wu, T.B.³ Wang, S.F.⁴ Chen, F.⁵ Tsai, M.J.⁶

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