Status and outlook of emerging nonvolatile memory technologies

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 567-570

  Müller, Gerhard ^a   Happ, Thomas ^a   Kund, Michael ^a   Lee, Gill Yong ^a   Nagel, Nicolas ^a   Sezi, Recai ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; FLASH MEMORY; GLASS; MAGNETORESISTANCE; MICROELECTRODES; RANDOM ACCESS STORAGE; REMANENCE; MRAM DEVICES; PHASE CHANGE MEMORY;

FERRO-ELECTRIC RAM (FERAM); ORGANIC RAM (ORAM); PHASE CHANGE RAM (PCRAM);

NONVOLATILE STORAGE;

EMERGING NON-VOLATILE MEMORY TECHNOLOGY; FLASH TECHNOLOGY; ORGANICS; PHASE CHANGE RAMS; STATE OF THE ART; STATUS AND OUTLOOK;

EID: 21644455568     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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4. A.R. Sitaram et al., "A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications", VLSI Tech. Dig., 2003, p. 15,
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10. D. Elmhurst et al., "A 1.8V 128Mb Mulilevel Cell Flash Memory with Flexible Read While Write", IEEE Journal of Solid-State Circ., Vol. 38, Noll, 2003, p.1929.