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Volumn 21, Issue 1-4 SPEC. ISS., 2008, Pages 61-66

Current status of resistive nonvolatile memories

(4) Lin, Chih Yang a,b Liu, Chih Yi a,b Lin, Chun Chieh a,b Tseng, T Y a,b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY (Taiwan)

Author keywords

Molecular materials; Nonvolatile memories; Perovskite oxides; Resistance random access memory (RRAM); Transition metal oxides

Indexed keywords

MOLECULAR MATERIALS; NONVOLATILE MEMORIES; PEROVSKITE OXIDES; RESISTANCE RANDOM ACCESS MEMORY (RRAM); TRANSITION METAL OXIDES;

COMPETITION; ELECTRIC POTENTIAL; MATERIALS; NONVOLATILE STORAGE; OXIDE MINERALS; PEROVSKITE; RANDOM ACCESS STORAGE; TRANSITION METALS;

TRANSITION METAL COMPOUNDS;

EID: 67651112129 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-007-9081-y Document Type: Article

Times cited : (16)

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