Nonvolatile resistive switching in graphene oxide thin films

Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

  He, C L ^a   Zhuge, F ^a   Zhou, X F ^a   Li, M ^a   Zhou, G C ^a   Liu, Y W ^a   Wang, J Z ^a   Chen, B ^a   Su, W J ^a   Liu, Z P ^a   Wu, Y H ^b   Cui, P ^a   Li, Run Wei ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENES; NON-VOLATILE; NON-VOLATILE MEMORY APPLICATION; ON THE GO; ON/OFF RATIO; OXIDE THIN FILMS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RETENTION TIME; SWITCHING EFFECT; SWITCHING THRESHOLD VOLTAGE; VACUUM FILTRATION;

FLUORINE CONTAINING POLYMERS; GRAPHITE; OXIDE FILMS; OXYGEN; SWITCHING SYSTEMS; THIN FILMS;

SWITCHING;

EID: 71949128933     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3271177     Document Type: Article

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