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Electrochemical and Solid-State Letters

Volumn 14, Issue 5, 2011, Pages

Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca 0.3MnO3 heterostructure resistive memory

(6) Bourim, El Mostafa a Park, Sangsoo a Liu, Xinjun a Biju, Kuyyadi P a Hwang, Hyunsang a Ignatiev, Alex a,b

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b UNIVERSITY OF HOUSTON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; FERROELECTRIC LAYERS; FERROELECTRIC POLARIZATION; HETEROSTRUCTURES; LATTICE STRAIN; MEMORY PERFORMANCE; PARALLEL CAPACITORS; PIEZO-ELECTRIC EFFECTS; PT ELECTRODE; PULSE MODES; RESISTANCE STATE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES;

ALUMINUM; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HETEROJUNCTIONS; HYSTERESIS; LEAD; MANGANESE OXIDE; OXIDE FILMS; PEROVSKITE; PIEZOELECTRICITY; PLATINUM; POLARIZATION; SWITCHING SYSTEMS; ZIRCONIUM;

SWITCHING;

EID: 79952491596 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3556977 Document Type: Article

Times cited : (8)

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