Schottky barrier characteristics of cobalt-nickel silicide/n-Si junctions for scaled-Si CMOS applications

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2403-2408

  Panda, Debashis ^a   Dhar, Achintya ^a   Ray, Samit K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Cobalt nickel silicide; Inhomogeneous barrier height; Resistivity; Schottky; TEM

Indexed keywords

ANNEALING; COBALT; CURRENT VOLTAGE CHARACTERISTICS; DIFFRACTION; DIODES; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; HOLOGRAPHIC INTERFEROMETRY; NICKEL; NICKEL ALLOYS; SILICIDES; SILICON; SILICON ALLOYS; TERNARY ALLOYS; TRANSITION METALS;

COBALT-NICKEL SILICIDE; INHOMOGENEOUS BARRIER HEIGHT; RESISTIVITY; SCHOTTKY; TEM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50549089473     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.927632     Document Type: Article

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