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Applied Physics Letters

Volumn 91, Issue 18, 2007, Pages

Resistive switching effect in SrTiO3-δ/Nb-doped SrTiO 3 heterojunction

(5) Ni, M C a,b Guo, S M a Tian, H F a Zhao, Y G a Li, J Q c

a TSINGHUA UNIVERSITY (China)

b CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HYSTERESIS; STRONTIUM COMPOUNDS; SWITCHING;

CAPACITANCE VOLTAGE CURVES; CURIE VON SCHWEIDLER LAW; CURRENT VOLTAGE CURVES; VOLTAGE PULSES;

HETEROJUNCTIONS;

EID: 35649004338 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2803317 Document Type: Article

Times cited : (87)

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