Tunneling across a ferroelectric

Science

Volumn 313, Issue 5784, 2006, Pages 181-183

  Tsymbal, Evgeny Y ^a   Kohlstedt, Hermann ^b,c  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC EQUIPMENT; ELECTRONS; HIGH ENERGY PHYSICS; NANOTECHNOLOGY; POLARIZATION;

ELECTRONIC DEVICES; NANOMETER; SPONTANEOUSLY POLARIZED MATERIALS; TUNNELING;

FERROELECTRIC MATERIALS;

ALUMINUM OXIDE; BISMUTH DERIVATIVE; FERRIC OXIDE; FERROMAGNETIC MATERIAL; LEAD; MAGNESIUM OXIDE; MANGANESE OXIDE; PEROVSKITE; TITANIUM; ZIRCONIUM;

ELECTRON; ELECTRONIC EQUIPMENT; PHYSICS; POLARIZATION;

DEVICE; DIELECTRIC CONSTANT; ELECTRIC ACTIVITY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRODE; ELECTRON TRANSPORT; ELECTRON TUNNELING; ELECTRONICS; FERROELECTRIC TUNNEL JUNCTION; FERROELECTRICS; FILM; MAGNETISM; MATERIALS; PIEZOELECTRICITY; PRIORITY JOURNAL; PROBABILITY; QUANTUM MECHANICS; REVIEW; THICKNESS;

EID: 33746013199     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1126230     Document Type: Review

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29. E.Y.T. thanks NSF (grants MR5EC DMR-0213808 and DMR-0203359) and the Nebraska Research Initiative for support of the research relevant to the subject of this article. H.K. thanks the Volkswagen-Stiftung under contract I/77737 and the Deutsche Forschungsgemeinschaft for financial support.