Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices

Advanced Materials

Volumn 22, Issue 43, 2010, Pages 4819-4822

  Muenstermann, Ruth ^a   Menke, Tobias ^a   Dittmann, Regina ^a   Waser, Rainer ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Conductive AFM; Data Storage; Memristors; Resistive Switching; SrTiO3; Thin Films

Indexed keywords

CONDUCTIVE AFM; DATA STORAGE; MEMRISTORS; RESISTIVE SWITCHING; SRTIO;

ATOMIC FORCE MICROSCOPY; DATA STORAGE EQUIPMENT; METAL INSULATOR BOUNDARIES; PASSIVE FILTERS; RESISTORS; STRONTIUM ALLOYS; SWITCHING SYSTEMS; THIN FILMS;

SWITCHING;

IRON; OXIDE; STRONTIUM; STRONTIUM TITANIUM OXIDE; TITANIUM;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; DATA STORAGE DEVICE; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; SIGNAL PROCESSING;

COMPUTER STORAGE DEVICES; ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; IRON; MEMBRANES, ARTIFICIAL; OXIDES; SIGNAL PROCESSING, COMPUTER-ASSISTED; STRONTIUM; TITANIUM;

EID: 78449303523     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201001872     Document Type: Article

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