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Volumn 208, Issue 2, 2011, Pages 284-299

Resistive memory switching in layered oxides: A nB nO 3n+2 perovskite derivatives and Bi 2Sr 2CaCu 2O 8+δ high-T c superconductor

Author keywords

carrier injection; cuprate superconductors; current voltage characteristics; perovskites; resistive memory switching; tunneling

Indexed keywords

CARRIER INJECTION; CONDUCTING LAYERS; CRITICAL TEMPERATURES; CUPRATE SUPERCONDUCTOR; CURRENT INJECTIONS; FLOATING GATES; HIGH-T; INSULATING LAYERS; INTRINSIC JOSEPHSON JUNCTION; LAYERED OXIDES; LOW TEMPERATURES; MEMORY EFFECTS; MEMORY SWITCHING; NIOBATES; OUT-OF-PLANE; PULSED MEASUREMENTS; RESISTIVE MEMORY SWITCHING; RESISTIVE STATE; RESISTIVE SWITCHING; S-SHAPED; SUPERCONDUCTING TRANSITIONS; TRAPPED CHARGE; TUNNELING;

EID: 79751505324     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026757     Document Type: Article
Times cited : (20)

References (57)
  • 7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.